長友 隆男

• 2002 - 2004 DCスパッタによる酸化チタン薄膜の光触媒特性
• 2002 - 2004 Photocatalytic Properties of TiO2 Films Prepared by DC Sputtering.
• 2001 - 2004 窒化ガリウム系半導体の基礎物性と電子デバイスに関する研究-量子ドットの成長と量子サイズ効果-
• 2001 - 2004 Research on Physical Properties of Gallium Nitride System Semiconductors and Electronic Devices -Quantum Dots and Quantum Size Effects-
• 2000 - 2004 色素ドープ型有機電界発光素子の発光機構の解明
2000 - 2004 Analysis of Luminescent Mechanisms of Organic Electroluminescent Devices Doped Organic Dyes into Host Materials(matrix).

• High-Speed Rotating-Disk Chemical Vapor Deposition Process for In-Situ Arsenic-Doped Polycrystalline Silicon Films(共著). Japanese Journal of Applied Physics. 2005. 44. 11. 7883-7888
• F Terai, H Kobayashi, S Katsui, N Tamaoki, T Nagatomo, T Homma. High-speed rotating-disk chemical vapor deposition process for in-situ arsenic-doped polycrystalline silicon films. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 11. 7883-7888
• Plasma Emission Spectrochemical Analysis of the Surface State of Particles in a Suspension System(共著). Japanese Journal of Applied Physics. 2005. 44. 2. 1027-1030
• K Kobayashi, A Sato, T Homma, T Nagatomo. Plasma emission spectrochemical analysis of the surface state of particles in a suspension system. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS. 2005. 44. 2. 1027-1030
• TERAI F, KOBAYASHI H, KATSUI S, SATO Y, NAGATOMO T, HOMMA T. Newly Developed High-Speed Rotating Disk Chemical Vapor Deposition Equipment for Poly-Si Films(共著). Japanese Journal of Applied Physics. 2005. 44. 1A. 125-130

もっと見る

• Organic Light-Emitting Devices Using Phosphorescent Dopants(共著)
  Proceedings of the 5th International Conference on Thin Film Physics and Application(Invited Paper) 2004
• Organic Light-Emitting Devices Using Phosphorescent Dopants
  Proceedings of the 5th International Conference on Thin Film Physics and Application(Invited Paper) 2004
• Fabrication and Properties of Bi2SiO5 Thin Films for MFIS Structures(共著)
  Proceedings of the 12th IEEE International Symposium on Applications of Ferroelectrics(ISAF) 2001
• Fabrication and Properties of Bi2SiO5 Thin Films for MFIS Structures
  Proceedings of the 12th IEEE International Symposium on Applications of Ferroelectrics(ISAF) 2001
• Thin Film Electroluminescent Diodes Based on Poly(vinyl carbazole)(共著)
  Organic Electroluminescent Materials and Devices 1997

もっと見る

• 窒化ガリウム系半導体の基礎物性と電子デバイスに関する研究-量子ドットの成長と量子サイズ効果-
  2001 - 2004
• Research on Physical Properties of Gallium Nitride System Semiconductors and Electronic Devices -Quantum Dots and Quantum Size Effects-
  2001 - 2004
• 色素ドープ型有機電界発光素子の発光機構の解明
  2000 - 2004
• Analysis of Luminescent Mechanisms of Organic Electroluminescent Devices Doped Organic Dyes into Host Materials(matrix).
  2000 - 2004
• 新しい高効率光源材料・デバイス
  1998 - 2001

もっと見る

• - 1968 芝浦工業大学 工学部 通信工学科
• - 1968 芝浦工業大学

• 工学博士 (京都大学)

• 2002 - 現在 ・2002-現在 DCスパッタによる酸化チタン薄膜の光触媒特性
• 2002 - 現在 ・2002-present Photocatalytic Properties of DC-Sputterd TiO2 Films.
• 1987 - 現在 ・1987-現在 有機EL素子の作成と発光機構の解明
• 1987 - 現在 ・1987-現在 MOVPE法による窒化物半導体のエピタキシャル成長と電子デバイスへの応用
• 1987 - 現在 ・1987-present Preparation of Organic EL Devices and Analysis of Luminescent
1987 - 現在 ・1987-present Epitaxial Growth of Nitride Semiconductors Prepared by MOVPE
1980 - 1990 ・1980-1990 ポリアセチレンを含む導電性高分子の合成と二次電池への応用
1980 - 1990 ・1980-1990 Preparation of Conducting Polymers Including Polyacetylene and
1970 - 1990 ・1970-1990 酸化錫、酸化インジウム錫などの透明電極の作成と太陽電池等への応用
1970 - 1990 ・1970-1990 Preparation of Tin Oxide and Indium-Tin Oxide Films and Their
Mechanisms.
and Their Applications to Electronic Devices.
Their Applications to Secondary Batteries.
Applications to Solar Cells.

応用電子物性分科会 ,  応用物理学会 ,  Inc. ,  The Electrochemical Society ,  高分子学会 ,  電子通信情報学会 ,  The Japan Society of Applied Physics ,  Inc. ,  The Electrochemical Society ,  The Society of Polymer Science, Japan ,  Information and Communication Engineers ,  The Institute of Electronics