研究者
J-GLOBAL ID:200901048016918173   更新日: 2024年01月30日

反保 衆志

タンポ ヒトシ | Tampo Hitoshi
所属機関・部署:
ホームページURL (1件): http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H58458129
研究分野 (1件): 薄膜、表面界面物性
競争的資金等の研究課題 (2件):
  • 2021 - 2024 多元系エピタキシャル半導体薄膜を用いた多様な欠陥の評価と制御
  • 2019 - 2022 多元系化合物半導体の少数キャリア拡散長の定量化手法の研究
論文 (45件):
  • Kosuke Takenaka, Shota Nunomura, Yuji Hayashi, Hibiki Komatsu, Susumu Toko, Hitoshi Tampo, Yuichi Setsuhara. Stability and gap states of amorphous In-Ga-Zn-Ox thin film transistors: Impact of sputtering configuration and post-annealing on device performance. Thin Solid Films. 2024. 790. 140203-140203
  • Fumio Kawamura, Yelim Song, Hidenobu Murata, Hitoshi Tampo, Takehiko Nagai, Takashi Koida, Jaeeun Jeon, Masataka Imura, Naoomi Yamada. Fabrication of the bandgap-tuned alkaline earth-alloyed SnS solar cell. Journal of the Ceramic Society of Japan. 2023. 131. 10. 708-711
  • Kaede Makiuchi, Fumio Kawamura, Junjun Jia, Yelim Song, Shunichiro Yata, Hitoshi Tampo, Hidenobu Murata, Naoomi Yamada. Pressure-Induced Transition from Wurtzite and Epitaxial Stabilization for Thin Films of Rocksalt MgSnN2. Chemistry of Materials. 2023
  • Fumio Kawamura, Yelim Song, Hidenobu Murata, Hitoshi Tampo, Takehiko Nagai, Takashi Koida, Masataka Imura, Naoomi Yamada. Tunability of the bandgap of SnS by variation of the cell volume by alloying with A.E. elements. SCIENTIFIC REPORTS. 2022. 12. 1. 7434
  • Changwook Jeong, Takehiko Nagai, Shogo Ishizuka, Hitoshi Tampo, Shibata Hajime, Shinho Kim, Yangdo Kim. Examination of Suitable Bandgap Grading of Cu(InGa)Se 2 Bottom Absorber Layers for Tandem Cell Application. physica status solidi (a). 2021
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MISC (27件):
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