Panagiotis Dimitrakis, Yoshihisa Fujisaki, Guohan Hu, Eisuke Tokumitsu. Preface. Materials Research Society Symposium Proceedings. 2015. 1729
Eisuke Tokumitsu, Tatsuya Shimoda. Oxide-channel ferroelectric-gate thin film transistors prepared by solution process. Proceedings of the International Display Workshops. 2015. 1. 71-74
Oxide-Channel Ferroelectric-Gate Thin Film Transistors with Nonvolatile Memory Function
“Ferroelectric-Gate Field Effect Transistor Memories”,Springer, 2016. 2016
Applications of Oxide Channel Ferroelectric-Gate Thin Film Transistors
“Ferroelectric-Gate Field Effect Transistor Memories”, Springer, 2016. 2016
Materials and physics for nonvolatile memories II : spring 2010, April 5-9, San Francisco, California, U.S.A.
Materials Research Society 2010 ISBN:9781605112275
電子物性・材料の事典
朝倉書店 2006
講演・口頭発表等 (211件):
Coating properties of chemical solution processed MoS2 thin films on various oxides
(2017 European Materials Research Society (E-MRS) Spring Meeting, Strasbourg, France, May 22-26, 2017. paper Q.PM.4 2017)
Chemical Solution Process of In-Based Oxides and MoS2 for Thin Film Transistors
(The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PA2-1-1 2017)
Direct Imprinting of Oxide Precursor Gel for New Fabrication Process of Thin Film Transistors
(The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017), June 18-321, 2017, Fukui, paper PO3-47 2017)
Investigation of Nb-Zr-O thin film using sol-gel coating
(82016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), paper B3-3(oral) July 4 - 6, 2016Hakodate Kokusai Hotel, Hakodate, Japan 2017)
Fabrication of MoS2 thin films on oxide-dielectric-covered substrates
(Compound Semiconductor Week, June 26-30, 2016 Toyama International Conference Center, Toyama paper MoP-ISCS-121 2017)