研究キーワード (6件)：
二次イオン質量分析計
, 表面分析
, 拡散
, Secodary Ion Mass Spectrometry
, Surface Analysis
, Diffusion
競争的資金等の研究課題 (3件)：
2014 - 2017 酸化亜鉛粒子の階層構造を利用したVOCガスセンサ
欠陥科学
Defect Chemistry
論文 (44件)：
Takeshi OHGAKI, Isao Sakaguchi, Naoki Ohashi. Structure and Electron Mobility of ScN Films Grown on α-Al2O3(1102) Substrates. Materials. 2018
Yoshinori Higashi, Shoichi Itoh, Minako Hashiguchi, Shuhei Sakata, Takafumi Hirata, Ken Watanabe, Isao Sakaguchi. Hydrogen diffusion in the apatite-water system: Fluorapatite parallel to the c-axis. GEOCHEMICAL JOURNAL. 2017. 51. 1. 115-122
Rokas Sazinas, Isao Skaguchi, Mari-Ann Einarsrud, Tor Grande. 134Ba diffusion in polycrystalline BaMO3 (M=Ti, Zr, Ce). AIP Adv. 2017. 7. 115024-1-115024-7
Shun Fukami, Munetake Taguchi, Yutaka Adachi, Isao Sakaguchi, Ken Watanabe, Toyohiko Kinoshita, Takayuki Muro, Tomohiro Matsushita, Kumihiko Matsui, Hiroshi Daimon, et al. Correlation Betwen HIgh Gas Sensitivity and Dopant Structure in W-doped ZnO. Phys. Rev. Appl. 2017. 7. 064029-1-064029-6
Ken Watanabe, Isao Sakaguchi, Minako Hashiguchi, Noriko Saito, Emily M. Ross, Hajime Haneda, Takeo Ohsawa, Naoki Ohashi. Isotope tracer investigation and ab-initio simulation of an isotropic hydrogen transport and possible multi-hydrogen centers in tin dioxide. JOURNAL OF APPLIED PHYSICS. 2016. 119. 22. 25704
T. T. Suzuki, Y. Adachi, N. Saito, M. Hashiguchi, I. Sakaguchi, N. Ohashi, S. Hishita. Surface segregation of W doped in ZnO thin films. SURFACE SCIENCE. 2014. 625. 1-6
Tsuyoshi Ogino, Jesse R. Williams, Ken Watanabe, Isao Sakaguchi, Shunichi Hishita, Hajime Haneda, Yutaka Adachi, Takeshi Ohgaki, Naoki Ohashi. Effect of crystalline polarity on microstructure and optoelectronic properties of gallium-doped zinc oxide films deposited onto glass substrates. THIN SOLID FILMS. 2014. 552. 56-61
Naoki Ohashi, Kenji Takahashi, Shunichi Hishita, Isao Sakaguchi, Hiroshi Funakubo, Hajime Haneda. Fabrication of ZnO microstructures by anisotropic wet-chemical etching. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2007. 154. 2. D82-D87
A Uedono, T Mori, K Morisawa, K Murakami, T Ohdaira, R Suzuki, T Mikado, K Ishioka, M Kitajima, S Hishita, et al. Hydrogen-terminated defects in ion-implanted silicon probed by monoenergetic positron beams. JOURNAL OF APPLIED PHYSICS. 2003. 93. 6. 3228-3233
K Yamamoto, K Kobayashi, T Ando, M Nishitani-Gamo, R Souda, Sakaguchi, I. Electronic structures of the diamond/boron-nitride interface. DIAMOND AND RELATED MATERIALS. 1998. 7. 7. 1021-1024
