木本恒暢

キモトツネノブ | Kimoto Tsunenobu

所属機関・部署：
職名：教授

研究分野 (2件)：電子デバイス、電子機器 , 電気電子材料工学

研究キーワード (3件)：半導体デバイス , 半導体材料 , Semiconductor Material

競争的資金等の研究課題 (38件)：

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論文 (609件)：

Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori. Theoretical study on high-field carrier transport and impact ionization coefficients in 4H-SiC. Materials Science in Semiconductor Processing. 2024. 173. 108126-108126
Masahiro Hara, Takeaki Kitawaki, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto. Tunneling current through non-alloyed metal/heavily-doped SiC interfaces. Materials Science in Semiconductor Processing. 2024. 171. 108023-108023
Ryoya Ishikawa, Hajime Tanaka, Mitsuaki Kaneko, Tsunenobu Kimoto. Origin of hole mobility anisotropy in 4H-SiC. Journal of Applied Physics. 2024. 135. 7
Kyota Mikami, Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto. Insight Into Mobility Improvement by the Oxidation-Minimizing Process in SiC MOSFETs. IEEE Transactions on Electron Devices. 2024. 71. 1. 931-934
Mitsuaki Kaneko, Masashi Nakajima, Qimin Jin, Noriyuki Maeda, Tsunenobu Kimoto. 350°C Operation of SiC Complementary JFET Logic Gates. 2023 IEEE CPMT Symposium Japan (ICSJ). 2023

MISC (160件)：

T. Kimoto, H. Niwa, T. Okuda, E. Saito, Y. Zhao, S. Asada, J. Suda. Carrier lifetime and breakdown phenomena in SiC power device material. Journal of Physics D: Applied Physics. 2018. 51. 36
Yusuke Nishi, Hiroki Sasakura, Tsunenobu Kimoto. Appearance of quantum point contact in Pt/NiO/Pt resistive switching cells. JOURNAL OF MATERIALS RESEARCH. 2017. 32. 14. 2631-2637
木本恒暢, 丹羽弘樹, 須田淳. 高耐圧SiCパワーデバイス実現に資する衝突イオン化係数の精密評価. 応用物理. 2017. 86. 5. 392-396
Tanaka H, Suda J, Kimoto T. Analysis of quasi-ballistic hole transport capability of Ge and Si nanowire pMOSFETs by a quantum-corrected Boltzmann transport equation. International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. 2017. 2017-September. 277-280
Tanaka H, Suda J, Kimoto T. Insight into phonon scattering in Si nanowires through high-field hole transport: Impacts of boundary condition and comparison with bulk phonon approximation. Journal of Physics: Conference Series. 2017. 864. 1

書籍 (16件)：

講演・口頭発表等 (228件)：

Progress and Future Challenges of SiC Power MOSFETs
(5th IEEE Electron Devices Technology and Manufacturing Conference 2021 2021)
WISE Program: Innovation of Advanced Photonic and Electronic Devices
(International Workshop on Education and Research for Future Electronics 2021)
Lateral spreads of Al and P atoms implanted into a high-purity semi-insulating SiC substrate
(2020 International Conference on Solid State Devices and Materials 2020)
High electron mobility along the c-axis in 4H-SiC
(2020 International Conference on Solid State Devices and Materials 2020)
Accurate Determination of Barrier Heights in Heavily-Doped SiC Schottky Barrier Diodes Fabricated with Various Metals
(2020 International Conference on Solid State Devices and Materials 2020)

Works (6件)：

学歴 (4件)：

学位 (1件)：

経歴 (4件)：

受賞 (23件)：

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所属学会 (7件)：

ワイドギャップ半導体学会 , Materials Research Society , IEEE , 電気学会 , 電子情報通信学会 , 日本結晶成長学会 , 応用物理学会

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木本 恒暢