Crystal Growth and Characterization of I-III-VI2 Semiconductors
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論文 (293件):
Yoshihiro Ishitani, Bojin Lin, Hnin Lai Lai Aye, Daiki Yoshikawa, Hideto Miyake, Kohei Ueno, Hiroshi Fujioka. Longitudinal optical (LO) and LO-like phonon resonant mid-infrared radiation emission and absorption by surface micro-structures on III-nitrides. Gallium Nitride Materials and Devices XIX. 2024
Shin-ichiro Sato, Kanako Shojiki, Ken-ichi Yoshida, Hideaki Minagawa, Hideto Miyake. Optical activation of implanted lanthanoid ions in aluminum nitride semiconductors by high temperature annealing. Optical Materials Express. 2024. 14. 2. 340-340
Kanako Shojiki, Kenjiro Uesugi, Shiyu Xiao, Hideto Miyake. Polarity control of sputter-deposited AlN with high-temperature face-to-face annealing. Materials Science in Semiconductor Processing. 2023. 166. 107736-107736
Bojin Lin, Hnin Lai Lai Aye, Kohei Ueno, Hiroshi Fujioka, Hideto Miyake, Yoshihiro Ishitani. Mid-infrared thermal radiation resonating with longitudinal-optical like phonon from n++-doped GaN-semi-insulating GaN grating structure. Journal of Physics D: Applied Physics. 2023
Toma Nishibayashi, Ryosuke Kondo, Eri Matsubara, Ryoya Yamada, Yoshinori Imoto, Koki Hattori, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, et al. Fabrication of vertical AlGaN-based ultraviolet-B laser diodes using a laser lift-off method. Applied Physics Express. 2023. 16. 10. 104001-104001