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J-GLOBAL ID：201702210740685028   整理番号：17A0759286

大気圧化学蒸着により成長させた単分子層W_xMo_1-xS_2:バンドギャップ工学と電界効果トランジスタ【Powered by NICT】

Monolayer W_xMo_{1- x}S₂ Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors

著者 (18件)： Liu Xinke (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Wu Jing (Institute of Materials Research and Engineering (IMRE), 2 Fusionopolis Way, Innovis #08-03, Singapore, 138634, Singapore) ,  Yu Wenjie (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai, 200050, P. R. China) ,  Chen Le (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Huang Zhonghui (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Jiang He (Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, 1088 Xueyuan Road, Shenzhen, 518055, P. R. China) ,  He Jiazhu (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Liu Qiang (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai, 200050, P. R. China) ,  Lu Youming (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Zhu Deliang (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Liu Wenjun (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Cao Peijiang (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Han Shun (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Xiong Xinbo (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Xu Wangying (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Ao Jin-Ping (College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Avenue, Shenzhen, 518060, P. R. China) ,  Ang Kah-Wee (Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore, Singapore) ,  He Zhubing (Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology, 1088 Xueyuan Road, Shenzhen, 518055, P. R. China)
資料名： Advanced Functional Materials  (Advanced Functional Materials)
巻： 27  号： 13  ページ： ROMBUNNO.201606469  発行年： 2017年 
JST資料番号： W1336A  ISSN： 1616-301X  CODEN： AFMDC6  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： ドイツ (DEU)  言語： 英語 (EN)

抄録/ポイント： 単分子層W_xMo_1xS_2ベース電界効果トランジスタを単分子層W_xMo_1 xS_2フレーク,大気圧下で化学蒸着法により成長させた上で初めて実証した。Ramanおよび光ルミネセンス測定を用いて詳細な材料研究は,成長したままの単分子層W_xMo_1 xS_2で行われてきた。単層W_xMo_1 xS_2の電子バンド構造を,第一原理理論を用いて計算した。単層W_xMo_1 xS_2の熱安定性はけい測定を用いて評価した。作製したW_xMo_1 xS_2FETに及ぼすキャリア輸送の研究を,温度依存電流測定を用いて解析した,300Kで約30cm~2V~ 1s~ 1の電界効果移動度が得られた。Copyright 2017 Wiley Publishing Japan K.K. All Rights reserved. Translated from English into Japanese by JST.【Powered by NICT】

シソーラス用語： 電流測定 ,  熱安定性 ,  *FET【トランジスタ】 ,  単一層 ,  フレーク ,  光ルミネセンス ,  *単分子層 ,  温度依存性 ,  *化学蒸着 ,  第一原理 ,  *バンドギャップ
準シソーラス用語： 電界効果移動度 ,  キャリア輸送 ,  電子バンド構造 ,  *APCVD , 【Automatic Indexing@JST】

著者キーワード (3件)： 単層WxMo1xS2 ,  光ルミネセンス ,  Raman分光法

分類 (1件)： トランジスタ  (NC03070N)

タイトルに関連する用語 (6件)： 大気圧化学蒸着 ,  成長 ,  単分子層 ,  バンドギャップ ,  工学 ,  電界効果トランジスタ