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J-GLOBAL ID：201702234475594809   整理番号：17A0749465

表面配位子密度制御による溶液処理全無機ペロブスカイトCsPbBr_3QLEDsの6.27%までの50倍EQE改善【Powered by NICT】

50-Fold EQE Improvement up to 6.27% of Solution-Processed All-Inorganic Perovskite CsPbBr₃ QLEDs via Surface Ligand Density Control

著者 (11件)： Li Jianhai (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Xu Leimeng (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Wang Tao (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Song Jizhong (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Chen Jiawei (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Xue Jie (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Dong Yuhui (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Cai Bo (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Shan Qingsong (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Han Boning (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China) ,  Zeng Haibo (Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China)
資料名： Advanced Materials  (Advanced Materials)
巻： 29  号： 5  ページ： ROMBUNNO.201603885  発行年： 2017年 
JST資料番号： W0001A  ISSN： 0935-9648  CODEN： ADVMEW  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： ドイツ (DEU)  言語： 英語 (EN)

抄録/ポイント： 50倍外部量子効率(6.27%まで)を有する溶液処理CsPbBr_3量子ドット発光ダイオードは,配位子密度制御(ヘキサン/酢酸エチル混合溶媒で処理),インクの安定性,光ルミネセンス量子収率,薄膜均一性およびキャリア注入効率の高いレベルの共存を誘導するによる表面不動態化とキャリア注入を均衡させることにより達成した。Copyright 2017 Wiley Publishing Japan K.K. All Rights reserved. Translated from English into Japanese by JST.【Powered by NICT】

シソーラス用語： 量子収量 ,  量子ドット ,  薄膜 ,  発光ダイオード ,  インク ,  *キャリア注入 ,  光ルミネセンス ,  脂肪酸 ,  カルボン酸エステル ,  アルカン
準シソーラス用語： 表面不動態化 ,  混合溶媒 ,  外部量子効率 ,  *溶液処理 , 【Automatic Indexing@JST】

著者キーワード (5件)： 全無機ペロブスカイト ,  セシウム鉛ハロゲン化物(CsPbX3) ,  コロイドナノ結晶 ,  量子ドット発光ダイオード(QLEDs) ,  表面配位子密度制御

分類 (5件)： 太陽電池  (NC03084O) ,  高分子固体の物理的性質  (CG02024U) ,  発光素子  (NC03082G) ,  トランジスタ  (NC03070N) ,  錯体のルミネセンス  (BM08095R)

物質索引 (2件)： 酢酸エチル ,  ヘキサン

タイトルに関連する用語 (4件)： 配位子 ,  密度制御 ,  溶液処理 ,  ペロブスカイト