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J-GLOBAL ID：201702252025848321   整理番号：17A0473276

パルスレーザ蒸着によりシリコン上に堆積したY_1 5Ce_1 5Fe_5O_12薄膜における増強された磁気光学効果【Powered by NICT】

Enhanced magneto-optical effect in Y_1.5Ce_1.5Fe₅O₁₂ thin films deposited on silicon by pulsed laser deposition

著者 (35件)： Zhang Y. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Zhang Y. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Zhang Y. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Wang C.T. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Wang C.T. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Wang C.T. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Liang X. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Liang X. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Liang X. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Peng B. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Peng B. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Peng B. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Lu H.P. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Lu H.P. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Lu H.P. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Zhou P.H. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Zhou P.H. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Zhou P.H. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Zhang L. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Zhang L. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Zhang L. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Xie J.X. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Xie J.X. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Xie J.X. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Deng L.J. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Deng L.J. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Deng L.J. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Zahradnik M. (Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic) ,  Beran L. (Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic) ,  Kucera M. (Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic) ,  Veis M. (Charles University, Ke Karlovu 5, 121 16 Prague, Czech Republic) ,  Ross C.A. (Department of Materials and Science and Engineering, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, MA 02139, USA) ,  Bi L. (National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Bi L. (State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China) ,  Bi L. (Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China)
資料名： Journal of Alloys and Compounds  (Journal of Alloys and Compounds)
巻： 703  ページ： 591-599  発行年： 2017年 
JST資料番号： D0083A  ISSN： 0925-8388  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： オランダ (NLD)  言語： 英語 (EN)

抄録/ポイント： シリコン上に蒸着した多結晶Ce:YIG薄膜は,統合された非相反フォトニックデバイスのための有望な材料候補である。これまで,シリコン上の多結晶Ce:YIG薄膜の報告されたFaraday回転は単結晶あるいはエピタキシャル薄膜のものよりかなり低く,メリット,デバイス帯域幅と製作公差の磁気光学性能を制限している。本論文では,パルスレーザ蒸着により公称Y_1 5Ce_1 5Fe_5O_12まで高Ce濃度を持つターゲットからのシリコン上のCe:YIG薄膜の成長について報告する。多結晶Y_1 5Ce_1 5Fe_5O_12薄膜は純粋なガーネット相,滑らかな表面粗さが0.7nmの,支配的なCe~3+原子価状態と室温で125emu/cm~3のバルク飽和磁化を示した。この材料は1550nm波長で 6410deg/cmの高いFaraday回転を示し,GGG(100)基板上にY_2Ce_1Fe_5O_12エピタキシャル薄膜のそれを超えていた。しかし高い損失と低い性能指数もY_2Ce_1Fe_5O_12薄膜と比較して1550nmの波長で観察され,恐らく作製中の低酸素分圧に起因する。低蒸着酸素分圧がCe溶解度とCe~3+濃度,大きなFaraday回転をもたらすを高めるのに不可欠である。Copyright 2017 Elsevier B.V., Amsterdam. All rights reserved. Translated from English into Japanese by JST.【Powered by NICT】

シソーラス用語： *セリウム ,  波長 ,  帯域幅 ,  *薄膜 ,  溶解度 ,  ざくろ石 ,  Faraday効果 ,  性能指数 ,  *磁気光学効果 ,  *磁気 ,  単結晶 ,  多結晶 ,  飽和磁化 ,  *パルスレーザ蒸着
準シソーラス用語： 酸素分圧 , 【Automatic Indexing@JST】

著者キーワード (6件)： 磁気光学 ,  Ce:YIG ,  磁気酸化物 ,  薄膜 ,  パルスレーザ蒸着 ,  シリコンフォトニクス

分類 (2件)： 酸化物薄膜  (BK14050P) ,  強誘電体,反強誘電体,強弾性  (BM05030B)

タイトルに関連する用語 (6件)： パルスレーザ蒸着 ,  シリコン ,  堆積 ,  薄膜 ,  増強 ,  磁気光学効果