文献
J-GLOBAL ID:200902123668590000
整理番号:02A0072692
Electrical Characterization at Cubic AlN/GaN Heterointerface Grown by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
著者 (7件):
KITAMURA T
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
,
ISHIDA Y
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
,
SHEN X Q
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
,
NAKANISHI H
(Sci. Univ. Tokyo, Chiba, JPN)
,
CHICHIBU S F
(Univ. Tsukuba, Ibaraki, JPN)
,
SHIMIZU M
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
,
OKUMURA H
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
資料名:
Physica Status Solidi. B. Basic Research
(Physica Status Solidi. B. Basic Research)
巻:
228
号:
2
ページ:
599-602
発行年:
2001年11月08日
JST資料番号:
C0599A
ISSN:
0370-1972
資料種別:
逐次刊行物 (A)
発行国:
ドイツ (DEU)
言語:
英語 (EN)