文献
J-GLOBAL ID:200902136042121755
整理番号:93A0886225
SOI上の室温0.1μm CMOS
A room temperature 0.1μm CMOS on SOI.
著者 (9件):
SHAHIDI G G
(IBM Semiconductor Research and Dovelopment Center, N.Y., USA)
,
BLAIR C
(IBM Semiconductor Research and Dovelopment Center, N.Y., USA)
,
BEYER K
(IBM Semiconductor Research and Dovelopment Center, N.Y., USA)
,
BUCELOT T
(IBM Semiconductor Research and Dovelopment Center, N.Y., USA)
,
BUTI T
(IBM Semiconductor Research and Dovelopment Center, N.Y., USA)
,
CHANG P N
(IBM Semiconductor Research and Dovelopment Center, N.Y., USA)
,
CHU S
(IBM Semiconductor Research and Dovelopment Center, N.Y., USA)
,
COANE P
(IBM Semiconductor Research and Dovelopment Center, N.Y., USA)
,
WARNOCK J
(IBM Semiconductor Research and Dovelopment Center, N.Y., USA)
資料名:
Digest of Technical Papers. Symposium on VLSI Technology
(Digest of Technical Papers. Symposium on VLSI Technology)
巻:
1993
ページ:
27-28
発行年:
1993年
JST資料番号:
A0035B
ISSN:
0743-1562
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)