文献
J-GLOBAL ID:200902136656126141
整理番号:93A0782876
Generation and annihilation of antiphase domain boundaries in GaAs on Si grown by molecular beam epitaxy.
著者 (7件):
GEORGAKILAS A
(Foundation for Research and Technology-Hellas (FORTH), Crete, GRC)
,
STOEMENOS J
(Aristotle Univ. Thessaloniki, Thessaloniki, GRC)
,
TSAGARAKI K
(Foundation for Research and Technology-Hellas (FORTH), Crete, GRC)
,
KOMNINOU P
(Aristotle Univ. Thessaloniki, Thessaloniki, GRC)
,
FLEVARIS N
(Aristotle Univ. Thessaloniki, Thessaloniki, GRC)
,
PANAYOTATOS P
(Foundation for Research and Technology-Hellas (FORTH), Crete, GRC)
,
CHRISTOU A
(Univ. Maryland, Maryland)
資料名:
Journal of Materials Research
(Journal of Materials Research)
巻:
8
号:
8
ページ:
1908-1921
発行年:
1993年08月
JST資料番号:
D0987B
ISSN:
0884-2914
CODEN:
JMREEE
資料種別:
逐次刊行物 (A)
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)