文献
J-GLOBAL ID:200902162701767685
整理番号:02A0127178
Optical Properties of Cubic InGaN/GaN Multiple Quantum Wells on 3C-SiC Substrates by Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy.
著者 (8件):
KITAMURA T
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
,
SUZUKI Y
(Sci. Univ. Tokyo, Chiba, JPN)
,
ISHIDA Y
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
,
SHEN X Q
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
,
NAKANISHI H
(Sci. Univ. Tokyo, Chiba, JPN)
,
CHICHIBU S F
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
,
SHIMIZU M
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
,
OKUMURA H
(National Inst. Advanced Industrial Sci. and Technol.(AIST), Ibaraki, JPN)
資料名:
Physica Status Solidi. A. Applied Research
(Physica Status Solidi. A. Applied Research)
巻:
188
号:
2
ページ:
705-709
発行年:
2001年11月23日
JST資料番号:
D0774A
ISSN:
0031-8965
資料種別:
逐次刊行物 (A)
発行国:
ドイツ (DEU)
言語:
英語 (EN)