文献
J-GLOBAL ID:200902166651130236
整理番号:93A0359704
New metal-organic precursors for growth of GaAs and AlxGa1-xAs by chemical beam epitaxy.
著者 (4件):
JONES A C
(Epichem Ltd., Merseyside, GBR)
,
LANE P A
(Royal Signals and Radar Establishment, Worcs., GBR)
,
MARTIN T
(Royal Signals and Radar Establishment, Worcs., GBR)
,
WHITEHOUSE C R
(Royal Signals and Radar Establishment, Worcs., GBR)
資料名:
Materials Science & Engineering. B. Solid-State Materials for Advanced Technology
(Materials Science & Engineering. B. Solid-State Materials for Advanced Technology)
巻:
17
号:
1/3
ページ:
1-8
発行年:
1993年02月28日
JST資料番号:
T0553A
ISSN:
0921-5107
資料種別:
逐次刊行物 (A)
発行国:
オランダ (NLD)
言語:
英語 (EN)