文献
J-GLOBAL ID:200902177581998006
整理番号:93A0890156
InAs(111)A Surface upon Various Chemical Treatments Studied by RHEED and XPS.
著者 (5件):
GALITSYN YU G
(Inst. Physics of Semiconductors, Russian Academy of Sciences, Novosibirsk, SUN)
,
MANSUROV V G
(Inst. Physics of Semiconductors, Russian Academy of Sciences, Novosibirsk, SUN)
,
POSHEVNEV V I
(Inst. Physics of Semiconductors, Russian Academy of Sciences, Novosibirsk, SUN)
,
SOKOLOV R A
(Inst. Physics of Semiconductors, Russian Academy of Sciences, Novosibirsk, SUN)
,
VALISHEVA N A
(Inst. Physics of Semiconductors, Russian Academy of Sciences, Novosibirsk, SUN)
資料名:
Physics, Chemistry and Mechanics of Surfaces
(Physics, Chemistry and Mechanics of Surfaces)
巻:
8
号:
5
ページ:
753-763
発行年:
1993年09月
JST資料番号:
D0591C
ISSN:
0734-1520
CODEN:
PCMSER
資料種別:
逐次刊行物 (A)
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)