文献
J-GLOBAL ID:200902178786478192
整理番号:93A0709862
Novel hemt structures using a strained InGaP Schottky layer.
著者 (5件):
FUJITA S
(Toshiba Research and Development Center, Kawasaki, JPN)
,
NODA T
(Toshiba Research and Development Center, Kawasaki, JPN)
,
WAGAI A
(Toshiba Research and Development Center, Kawasaki, JPN)
,
NOZAKI C
(Toshiba Research and Development Center, Kawasaki, JPN)
,
ASHIZAWA Y
(Toshiba Research and Development Center, Kawasaki, JPN)
資料名:
5th International Conference on Indium Phosphide and Related Materials
(5th International Conference on Indium Phosphide and Related Materials)
ページ:
497-500
発行年:
1993年
JST資料番号:
K19930399
ISBN:
0-7803-0994-4
資料種別:
会議録 (C)
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)