文献
J-GLOBAL ID:200902196787450923
整理番号:93A0781496
Laser-assisted low temperature deposition of WSix from WF6 and SiH4.
著者 (4件):
IZQUIERDO R
(Ecole Polytechnique de Montr<span style=text-decoration:overline>e ́</span>al, Qu<span style=text-decoration:overline>e ́</span>bec, CAN)
,
DESJARDINS P
(Ecole Polytechnique de Montr<span style=text-decoration:overline>e ́</span>al, Qu<span style=text-decoration:overline>e ́</span>bec, CAN)
,
ELYAAGOUBI N
(Ecole Polytechnique de Montr<span style=text-decoration:overline>e ́</span>al, Qu<span style=text-decoration:overline>e ́</span>bec, CAN)
,
MEUNIER M
(Ecole Polytechnique de Montr<span style=text-decoration:overline>e ́</span>al, Qu<span style=text-decoration:overline>e ́</span>bec, CAN)
資料名:
Chemical Perspectives of Microelectronic Materials 3
(Chemical Perspectives of Microelectronic Materials 3)
ページ:
209-214
発行年:
1993年
JST資料番号:
K19930443
ISBN:
1-55899-177-8
資料種別:
会議録 (C)
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)