文献
J-GLOBAL ID:200902198847806636
整理番号:94A0149927
Peculiarities of thermal donors generation and oxygen precipitation at 650°C with silicon irradiated by neutrons.
著者 (6件):
NEJMASH V B
(Inst. Physics, Academy of Sciences of the Ukraine, Kiev, SUN)
,
POMOZOV Y V
(Inst. Physics, Academy of Sciences of the Ukraine, Kiev, SUN)
,
SHAKHOVTSOV V I
(Inst. Physics, Academy of Sciences of the Ukraine, Kiev, SUN)
,
CABALDIN A N
(Lab. Solid State Electronic Materials, Drogobich, SUN)
,
MALKO L R
(Lab. Solid State Electronic Materials, Drogobich, SUN)
,
TSMOTS V M
(Lab. Solid State Electronic Materials, Drogobich, SUN)
資料名:
Defect and Diffusion Forum
(Defect and Diffusion Forum)
巻:
103/105
ページ:
537-542
発行年:
1993年
JST資料番号:
D0958B
ISSN:
1012-0386
資料種別:
逐次刊行物 (A)
発行国:
スイス (CHE)
言語:
英語 (EN)