文献
J-GLOBAL ID:200902201178341542
整理番号:07A0110366
重ホウ素ドープ半導体ホモエピタキシャルダイヤモンド成長におけるホウ素原子の役割-表面形態の研究
The role of boron atoms in heavily boron-doped semiconducting homoepitaxial diamond growth - Study of surface morphology
著者 (8件):
TOKUDA Norio
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
,
SAITO Takeyasu
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
,
UMEZAWA Hitoshi
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
,
OKUSHI Hideyo
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
,
OKUSHI Hideyo
(Core Res. for Evolutional Sci. and Technol. (CREST), Japan Sci. and Technol. Corp. (JST), JPN)
,
YAMASAKI Satoshi
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
,
YAMASAKI Satoshi
(Core Res. for Evolutional Sci. and Technol. (CREST), Japan Sci. and Technol. Corp. (JST), JPN)
,
YAMASAKI Satoshi
(Inst. of Applied Physics, Univ. of Tsukuba, 1-1-1 Tennoudai, Tsukuba 305-8573, JPN)
資料名:
Diamond and Related Materials
(Diamond and Related Materials)
巻:
16
号:
2
ページ:
409-411
発行年:
2007年02月
JST資料番号:
W0498A
ISSN:
0925-9635
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)