文献
J-GLOBAL ID:200902202425324687
整理番号:09A0562039
原子層堆積させたAl2O3をゲート誘電体として持つGaAsの(111)Aおよび(100)表面上に作製された金属-酸化物-半導体電界効果トランジスタ
Metal-oxide-semiconductor field-effect transistors on GaAs (111)A surface with atomic-layer-deposited Al2O3 as gate dielectrics
著者 (5件):
XU M.
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...)
,
WU Y. Q.
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...)
,
KOYBASI O.
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...)
,
SHEN T.
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...)
,
YE P. D.
(School of Electrical and Computer Engineering and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
94
号:
21
ページ:
212104
発行年:
2009年05月25日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)