文献
J-GLOBAL ID:200902212358004830
整理番号:08A0921205
金属/InGaN/GaNヘテロ接合構造の光電子特性
Photoelectric characteristics of metal/InGaN/GaN heterojunction structure
著者 (13件):
SUN X
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
LIU W B
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
JIANG D S
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
LIU Z S
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
ZHANG S
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
WANG L L
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
WANG H
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
ZHU J J
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
DUAN L H
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
WANG Y T
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
ZHAO D G
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
ZHANG S M
(Inst. of Semiconductors, Chinese Acad. of Sci., Beijing, CHN)
,
YANG H
(Suzhou Inst. of Nano-tech and Nano-bionics, Chinese Acad. of Sci., Suzhou, CHN)
資料名:
Journal of Physics. D. Applied Physics
(Journal of Physics. D. Applied Physics)
巻:
41
号:
16
ページ:
165108,1-5
発行年:
2008年08月21日
JST資料番号:
B0092B
ISSN:
0022-3727
CODEN:
JPAPBE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)