文献
J-GLOBAL ID:200902216297000360
整理番号:09A0189336
Si基板上のSiC膜上に形成したエピタキシャルグラフェンのRaman散乱分光法
Raman-Scattering Spectroscopy of Epitaxial Graphene Formed on SiC Film on Si Substrate
著者 (12件):
MIYAMOTO Yu
(Res. Inst. of Electrical Communication, Tohoku Univ., JPN)
,
HANDA Hiroyuki
(Res. Inst. of Electrical Communication, Tohoku Univ., JPN)
,
SAITO Eiji
(Res. Inst. of Electrical Communication, Tohoku Univ., JPN)
,
KONNO Atsushi
(Res. Inst. of Electrical Communication, Tohoku Univ., JPN)
,
NARITA Yuzuru
(Dep. of Electrical Engineering, Yamagata Univ., JPN)
,
SUEMITSU Maki
(Res. Inst. of Electrical Communication, Tohoku Univ., JPN)
,
SUEMITSU Maki
(CREST, Japan Sci. and Technol. Agency, JPN)
,
FUKIDOME Hirokazu
(Center for Interdisciplinary Res., Tohoku Univ., JPN)
,
ITO Takashi
(Center for Interdisciplinary Res., Tohoku Univ., JPN)
,
YASUI Kanji
(Dept. of Electrical Engineering, Nagaoka Univ. of Technol., JPN)
,
NAKAZAWA Hideki
(Dept. of Materials Sci. and Technol., Hirosaki Univ., JPN)
,
ENDOH Tetsuo
(Center for Interdisciplinary Res., Tohoku Univ., JPN)
資料名:
e-Journal of Surface Science and Nanotechnology (Web)
(e-Journal of Surface Science and Nanotechnology (Web))
巻:
7
ページ:
107-109 (J-STAGE)
発行年:
2009年
JST資料番号:
U0016A
ISSN:
1348-0391
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
日本 (JPN)
言語:
英語 (EN)