文献
J-GLOBAL ID:200902222687443254
整理番号:05A0563915
イオン援助蒸着によるシードガラス基板上へのけい素の低温エピタクシーの最適化
Optimisation of low-temperature silicon epitaxy on seeded glass substrates by ion-assisted deposition
著者 (6件):
STRAUB Axel
(Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, Univ. of New South Wales, NSW, AUS)
,
INNS Daniel
(Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, Univ. of New South Wales, NSW, AUS)
,
TERRY Mason L.
(Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, Univ. of New South Wales, NSW, AUS)
,
HUANG Yidan
(Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, Univ. of New South Wales, NSW, AUS)
,
WIDENBORG Per I.
(Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, Univ. of New South Wales, NSW, AUS)
,
ABERLE Armin G.
(Centre of Excellence for Advanced Silicon Photovoltaics and Photonics, Univ. of New South Wales, NSW, AUS)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
280
号:
3-4
ページ:
385-400
発行年:
2005年07月01日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)