文献
J-GLOBAL ID:200902223549218246
整理番号:08A1148607
多機能NVMおよびキャパシタレス1T-DRAMを目指したSiC上に作られたバンドオフセットFinFETベースのURAM(統合RAM)
Band Offset FinFET-Based URAM (Unified-RAM) Built on SiC for Multi-Functioning NVM and Capacitorless 1T-DRAM
著者 (16件):
HAN Jin-Woo
(KAIST, Daejeon, KOR)
,
RYU Seong-Wan
(KAIST, Daejeon, KOR)
,
KIM Sungho
(KAIST, Daejeon, KOR)
,
KIM Chung-Jin
(KAIST, Daejeon, KOR)
,
AHN Jae-Hyuk
(KAIST, Daejeon, KOR)
,
CHOI Sung-Jin
(KAIST, Daejeon, KOR)
,
CHOI Kyu Jin
(Jusung Engineering, Gwangju, KOR)
,
CHO Byung Jin
(KAIST, Daejeon, KOR)
,
KIM Jin Soo
(National Nanofab Center, Daejeon, KOR)
,
KIM Kwang Hee
(National Nanofab Center, Daejeon, KOR)
,
LEE Gi Sung
(National Nanofab Center, Daejeon, KOR)
,
OH Jae Sub
(National Nanofab Center, Daejeon, KOR)
,
SONG Myong Ho
(National Nanofab Center, Daejeon, KOR)
,
PARK Yun Chang
(National Nanofab Center, Daejeon, KOR)
,
KIM Jeoung Woo
(National Nanofab Center, Daejeon, KOR)
,
CHOI Yang-Kyu
(KAIST, Daejeon, KOR)
資料名:
Digest of Technical Papers. Symposium on VLSI Technology
(Digest of Technical Papers. Symposium on VLSI Technology)
巻:
2008
ページ:
157-158
発行年:
2008年
JST資料番号:
A0035B
ISSN:
0743-1562
資料種別:
会議録 (C)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)