文献
J-GLOBAL ID:200902228986678509
整理番号:08A0781549
ゲート誘電体としてAl2O3/Ga2O3(Gd2O3)を有する高性能自己整列反転チャネルIn0.53Ga0.47As金属-酸化物-半導体電界効果トランジスタ
High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics
著者 (9件):
LIN T. D.
(Dep. of Materials Sci. and Engineering, National Tsing Hua Univ., Hsinchu 30013, Taiwan)
,
CHIU H. C.
(Dep. of Materials Sci. and Engineering, National Tsing Hua Univ., Hsinchu 30013, Taiwan)
,
CHANG P.
(Dep. of Materials Sci. and Engineering, National Tsing Hua Univ., Hsinchu 30013, Taiwan)
,
TUNG L. T.
(Dep. of Materials Sci. and Engineering, National Tsing Hua Univ., Hsinchu 30013, Taiwan)
,
CHEN C. P.
(Dep. of Materials Sci. and Engineering, National Tsing Hua Univ., Hsinchu 30013, Taiwan)
,
HONG M.
(Dep. of Materials Sci. and Engineering, National Tsing Hua Univ., Hsinchu 30013, Taiwan)
,
KWO J.
(Dep. of Physics, National Tsing Hua Univ., Hsinchu 30013, Taiwan)
,
TSAI W.
(Intel Corp., SC1-05, 2200 Mission Coll. Blvd., Santa Clara, California 95052, USA)
,
WANG Y. C.
(WIN Semiconductors Corp., Taoyuan 33383, Taiwan)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
93
号:
3
ページ:
033516
発行年:
2008年07月21日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)