文献
J-GLOBAL ID:200902231597995664
整理番号:08A0914309
ゲルマニウムの金属-酸化物-半導体デバイス用のLu2O3/Al2O3ゲート絶縁体
Lu2O3/Al2O3 gate dielectrics for germanium metal-oxide-semiconductor devices
著者 (8件):
DARMAWAN P.
(School of Materials Sci. and Engineering, Nanyang Technological Univ., 50 Nanyang Avenue, Singapore 639798, SGP)
,
CHAN M. Y.
(School of Materials Sci. and Engineering, Nanyang Technological Univ., 50 Nanyang Avenue, Singapore 639798, SGP)
,
ZHANG T.
(School of Materials Sci. and Engineering, Nanyang Technological Univ., 50 Nanyang Avenue, Singapore 639798, SGP)
,
SETIAWAN Y.
(School of Materials Sci. and Engineering, Nanyang Technological Univ., 50 Nanyang Avenue, Singapore 639798, SGP)
,
SENG H. L.
(Inst. of Materials Res. and Engineering, A*STAR (Agency for Sci., Technol. and Research), 3 Res. Link, Singapore ...)
,
CHAN T. K.
(Dep. of Physics, National Univ. of Singapore, 2 Sci. Drive 3, Singapore 117542, SGP)
,
OSIPOWICZ T.
(Dep. of Physics, National Univ. of Singapore, 2 Sci. Drive 3, Singapore 117542, SGP)
,
LEE P. S.
(School of Materials Sci. and Engineering, Nanyang Technological Univ., 50 Nanyang Avenue, Singapore 639798, SGP)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
93
号:
6
ページ:
062901
発行年:
2008年08月11日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)