文献
J-GLOBAL ID:200902232986803580
整理番号:05A0646236
圧力成長GaN基板上のHVPEによる厚いGaN層の堆積
Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates
著者 (7件):
LUCZNIK B.
(High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL)
,
PASTUSZKA B.
(High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL)
,
GRZEGORY I.
(High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL)
,
BOCKOWSKI M.
(High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL)
,
KAMLER G.
(High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL)
,
LITWIN-STASZEWSKA E.
(High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL)
,
POROWSKI S.
(High Pressure Res. Center, Polish Acad. of Sciences, Crystal Growth Lab., ul. Sokolowska 29/37, 01-142 Warsaw, POL)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
281
号:
1
ページ:
38-46
発行年:
2005年07月15日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)