文献
J-GLOBAL ID:200902234118479869
整理番号:07A0109907
十層pドープ1.3μm InAs/InGaAs/GaAs量子ドットレーザからの低透明度電流密度及び高温動作
Low transparency current density and high temperature operation from ten-layer p-doped 1.3 μm InAs/InGaAs/GaAs quantum dot lasers
著者 (5件):
LIU C. Y.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., 639798 Singapore, SGP)
,
YOON S. F.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., 639798 Singapore, SGP)
,
CAO Q.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., 639798 Singapore, SGP)
,
TONG C. Z.
(School of Electrical and Electronic Engineering, Nanyang Technological Univ., 639798 Singapore, SGP)
,
LI H. F.
(School of Materials Sci. and Engineering, Nanyang Technological Univ., 639798 Singapore, SGP)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
90
号:
4
ページ:
041103-041103-3
発行年:
2007年01月22日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)