文献
J-GLOBAL ID:200902242970320160
整理番号:06A0510034
O-終端の多量Pドープホモエピタキシャルダイヤモンドの電界放出過程
Field emission process of O-terminated heavily P-doped homoepitaxial diamond
著者 (7件):
YAMADA Takatoshi
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
,
KATO Hiromitsu
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
,
TAKEUCHI Daisuke
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
,
SHIKATA Shin-ichi
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
,
YAMAGUCHI Hisato
(Dep. of Physics, International Christian Univ. (ICU), 3-10-2 Osawa, Mitaka, Tokyo 181-8585, JPN)
,
OKANO Ken
(Dep. of Physics, International Christian Univ. (ICU), 3-10-2 Osawa, Mitaka, Tokyo 181-8585, JPN)
,
NEBEL Christoph E.
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba 305-8568 ...)
資料名:
Diamond and Related Materials
(Diamond and Related Materials)
巻:
15
号:
4-8
ページ:
863-865
発行年:
2006年04月
JST資料番号:
W0498A
ISSN:
0925-9635
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)