文献
J-GLOBAL ID:200902243994578768
整理番号:07A1230707
高速および高密度の不揮発性メモリに適用可能な二系列の酸化物レジスタ
Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
著者 (15件):
LEE Myoung-Jae
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
PARK Youngsoo
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
SUH Dong-Seok
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
LEE Eun-Hong
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
SEO Sunae
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
KIM Dong-Chirl
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
JUNG Ranju
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
KANG Bo-Soo
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
AHN Seung-Eon
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
LEE Chang Bum
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
SEO David H
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
CHA Young-Kwan
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
YOO In-Kyeong
(Samsung Advanced Inst. Technol., Suwon, KOR)
,
KIM Jin-Soo
(Konkuk Univ., Seoul, KOR)
,
PARK Bae Ho
(Konkuk Univ., Seoul, KOR)
資料名:
Advanced Materials
(Advanced Materials)
巻:
19
号:
22
ページ:
3919-3923
発行年:
2007年11月19日
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
ドイツ (DEU)
言語:
英語 (EN)