文献
J-GLOBAL ID:200902246083485001
整理番号:05A0564405
高誘電率スタックゲート誘電体におけるキャリア伝導および劣化の機構解明のためのキャリア分離解析
Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics
著者 (13件):
MIZUBAYASHI Wataru
(Advanced Semiconductor Res. Center (ASRC), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN)
,
YASUDA Naoki
(MIRAI Project, Assoc. of Super-Advanced Electronics Technol.s (ASET), Tsukuba, JPN)
,
OKADA Kenji
(MIRAI Project, Assoc. of Super-Advanced Electronics Technol.s (ASET), Tsukuba, JPN)
,
OTA Hiroyuki
(Advanced Semiconductor Res. Center (ASRC), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN)
,
HISAMATSU Hirokazu
(MIRAI Project, Assoc. of Super-Advanced Electronics Technol.s (ASET), Tsukuba, JPN)
,
IWAMOTO Kunihiko
(MIRAI Project, Assoc. of Super-Advanced Electronics Technol.s (ASET), Tsukuba, JPN)
,
TOMINAGA Koji
(MIRAI Project, Assoc. of Super-Advanced Electronics Technol.s (ASET), Tsukuba, JPN)
,
YAMAMOTO Katsuhiko
(MIRAI Project, Assoc. of Super-Advanced Electronics Technol.s (ASET), Tsukuba, JPN)
,
HORIKAWA Tsuyoshi
(Advanced Semiconductor Res. Center (ASRC), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN)
,
NABATAME Toshihide
(MIRAI Project, Assoc. of Super-Advanced Electronics Technol.s (ASET), Tsukuba, JPN)
,
SATAKE Hideki
(MIRAI Project, Assoc. of Super-Advanced Electronics Technol.s (ASET), Tsukuba, JPN)
,
TORIUMI Akira
(Advanced Semiconductor Res. Center (ASRC), National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN)
,
TORIUMI Akira
(The Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
45
号:
7-8
ページ:
1041-1050
発行年:
2005年07月
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)