文献
J-GLOBAL ID:200902258766072843
整理番号:08A0383495
プラズマエッチング過程における放射,ラジカル,イオンによる低k多孔性SiOCH膜のプラズマ損傷機構
Plasma damage mechanisms for low-k porous SiOCH films due to radiation, radicals, and ions in the plasma etching process
著者 (7件):
UCHIDA Saburo
(Dep. of Electrical Engineering and Computer Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku ...)
,
TAKASHIMA Seigo
(Dep. of Electrical Engineering and Computer Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku ...)
,
HORI Masaru
(Dep. of Electrical Engineering and Computer Sci., Graduate School of Engineering, Nagoya Univ., Furo-cho, Chikusa-ku ...)
,
FUKASAWA Masanaga
(Process Technol. Dep., Semiconductor Technol. Dev. Div., Semiconductor Business Group, Sony Corp., 4-14-1 Asahi-cho ...)
,
OHSHIMA Keiji
(Process Technol. Dep., Semiconductor Technol. Dev. Div., Semiconductor Business Group, Sony Corp., 4-14-1 Asahi-cho ...)
,
NAGAHATA Kazunori
(Process Technol. Dep., Semiconductor Technol. Dev. Div., Semiconductor Business Group, Sony Corp., 4-14-1 Asahi-cho ...)
,
TATSUMI Tetsuya
(Process Technol. Dep., Semiconductor Technol. Dev. Div., Semiconductor Business Group, Sony Corp., 4-14-1 Asahi-cho ...)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
103
号:
7
ページ:
073303
発行年:
2008年04月01日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)