文献
J-GLOBAL ID:200902277152865612
整理番号:09A0759088
GaNの過渡的原子挙動と表面カイネティクス
Transient atomic behavior and surface kinetics of GaN
著者 (5件):
MOSELEY Michael
(School of Electrical and Computer Engineering, Georgia Inst. of Technol., Atlanta, Georgia 30332-0250, USA)
,
BILLINGSLEY Daniel
(School of Electrical and Computer Engineering, Georgia Inst. of Technol., Atlanta, Georgia 30332-0250, USA)
,
HENDERSON Walter
(School of Electrical and Computer Engineering, Georgia Inst. of Technol., Atlanta, Georgia 30332-0250, USA)
,
TRYBUS Elaissa
(School of Electrical and Computer Engineering, Georgia Inst. of Technol., Atlanta, Georgia 30332-0250, USA)
,
DOOLITTLE W. Alan
(School of Electrical and Computer Engineering, Georgia Inst. of Technol., Atlanta, Georgia 30332-0250, USA)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
106
号:
1
ページ:
014905
発行年:
2009年07月01日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)