文献
J-GLOBAL ID:200902277550549470
整理番号:07A0689593
強化歪,多孔質低k BEOLと液浸リソグラフィを使った高性能45nm SOI技術
High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography
著者 (40件):
NARASIMHA S.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
ONISHI K.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
NAYFEH H. M.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
WAITE A.
(IBM Systems and Technol. Group, Advanced Micro Devices Inc.)
,
WEYBRIGHT M.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
JOHNSON J.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
FONSECA C.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
CORLISS D.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
ROBINSON C.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
CROUSE M.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
YANG D.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
WU C-H. J.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
GABOR A.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
ADAM T.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
AHSAN I.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
BELYANSKY M.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
BLACK L.
(IBM Systems and Technol. Group, Advanced Micro Devices Inc.)
,
BUTT S.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
CHENG J.
(IBM Systems and Technol. Group, Advanced Micro Devices Inc.)
,
CHOU A.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
COSTRINI G.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
DIMITRAKOPOULOS C.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
DOMENICUCCI A.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
FISHER P.
(IBM Systems and Technol. Group, Advanced Micro Devices Inc.)
,
FRYE A.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
GATES S.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
GRECO S.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
GRUNOW S.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
HARGROVE M.
(IBM Systems and Technol. Group, Advanced Micro Devices Inc.)
,
HOLT J.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
JENG S-J.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
KELLING M.
(IBM Systems and Technol. Group, Advanced Micro Devices Inc.)
,
KIM B.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
LANDERS W.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
LAROSA G.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
LEA D.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
LEE M. H.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
LIU X.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
LUSTIG N.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
,
MCKNIGHT A.
(IBM Semiconductor Res. and Dev. Center (SRDC), NY)
資料名:
Technical Digest. International Electron Devices Meeting
(Technical Digest. International Electron Devices Meeting)
巻:
2006 Vol.1
ページ:
423-426
発行年:
2006年
JST資料番号:
C0829B
ISSN:
0163-1918
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)