文献
J-GLOBAL ID:200902294198886772
整理番号:07A0467287
N極性InGaN/GaN多重量子井戸の成長とキャラクタリゼーション
Growth and characterization of N-polar InGaN/GaN multiquantum wells
著者 (6件):
KELLER S.
(Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106 and Materials Dep. ...)
,
FICHTENBAUM N. A.
(Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106 and Materials Dep. ...)
,
FURUKAWA M.
(Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106 and Materials Dep. ...)
,
SPECK J. S.
(Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106 and Materials Dep. ...)
,
DENBAARS S. P.
(Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106 and Materials Dep. ...)
,
MISHRA U. K.
(Electrical and Computer Engineering Dep., Univ. of California, Santa Barbara, California 93106 and Materials Dep. ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
90
号:
19
ページ:
191908-191908-3
発行年:
2007年05月07日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)