文献
J-GLOBAL ID:200902297062197280
整理番号:06A0819572
エピタキシャルBiTiO3高kゲート絶縁物を持つルブレン単結晶電界効果トランジスタ
Rubrene single crystal field-effect transistor with epitaxial BaTiO3 high-k gate insulator
著者 (8件):
HIROSHIBA Nobuya
(Dep. of Physics, Graduate School of Sci., Tohoku University-CREST-JST, 6-3 Aoba Aramaki Aoba-ku, Sendai, Miyagi ...)
,
KUMASHIRO Ryotaro
(Dep. of Physics, Graduate School of Sci., Tohoku University-CREST-JST, 6-3 Aoba Aramaki Aoba-ku, Sendai, Miyagi ...)
,
TANIGAKI Katsumi
(Dep. of Physics, Graduate School of Sci., Tohoku University-CREST-JST, 6-3 Aoba Aramaki Aoba-ku, Sendai, Miyagi ...)
,
TAKENOBU Taishi
(Inst. for Material Res., Tohoku University-CREST-JST, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JPN)
,
IWASA Yoshihiro
(Inst. for Material Res., Tohoku University-CREST-JST, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, JPN)
,
KOTANI Kenta
(Inst. of Laser Engineering, Osaka Univ., 2-6 Yamadaoka, Suita, Osaka 565-0871, JPN)
,
KAWAYAMA Iwao
(Inst. of Laser Engineering, Osaka Univ., 2-6 Yamadaoka, Suita, Osaka 565-0871, JPN)
,
TONOUCHI Masayoshi
(Inst. of Laser Engineering, Osaka Univ., 2-6 Yamadaoka, Suita, Osaka 565-0871, JPN)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
89
号:
15
ページ:
152110-152110-3
発行年:
2006年10月09日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)