文献
J-GLOBAL ID:200902297657861604
整理番号:05A0991399
中性歪位置に埋め込まれた超フレキシブル有機電界効果トランジスタ
Ultraflexible organic field-effect transistors embedded at a neutral strain position
著者 (6件):
SEKITANI Tsuyoshi
(Quantum Phase Electronics Center, School of Engineering, Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
IBA Shingo
(Quantum Phase Electronics Center, School of Engineering, Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
KATO Yusaku
(Quantum Phase Electronics Center, School of Engineering, Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
NOGUCHI Yoshiaki
(Quantum Phase Electronics Center, School of Engineering, Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
SOMEYA Takao
(Quantum Phase Electronics Center, School of Engineering, Univ. of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, JPN)
,
SAKURAI Takayasu
(Center for Collaborative Res., Univ. of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, JPN)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
87
号:
17
ページ:
173502-173502-3
発行年:
2005年10月24日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)