文献
J-GLOBAL ID:201002201908406840
整理番号:10A0732828
金属-絶縁体-半導体ヘテロ構造キャパシタのC(V)キャラクタリゼイションによる窒化ケイ素不動態化とAlGaN/AlN/GaNヘテロ構造との間の界面の研究
Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C(V) characterization of metal-insulator-semiconductor-heterostructure capacitors
著者 (8件):
FAGERLIND M.
(Dep. of Microtechnology and Nanoscience, Chalmers Univ. of Technol., SE-41296 Goeteborg, SWE)
,
ALLERSTAM F.
(Dep. of Microtechnology and Nanoscience, Chalmers Univ. of Technol., SE-41296 Goeteborg, SWE)
,
SVEINBJOERNSSON E. Oe.
(Dep. of Microtechnology and Nanoscience, Chalmers Univ. of Technol., SE-41296 Goeteborg, SWE)
,
RORSMAN N.
(Dep. of Microtechnology and Nanoscience, Chalmers Univ. of Technol., SE-41296 Goeteborg, SWE)
,
KAKANAKOVA-GEORGIEVA A.
(Dep. of Physics, Chemistry and Biology, Linkoeping Univ., SE-58183 Linkoeping, SWE)
,
LUNDSKOG A.
(Dep. of Physics, Chemistry and Biology, Linkoeping Univ., SE-58183 Linkoeping, SWE)
,
FORSBERG U.
(Dep. of Physics, Chemistry and Biology, Linkoeping Univ., SE-58183 Linkoeping, SWE)
,
JANZEN E.
(Dep. of Physics, Chemistry and Biology, Linkoeping Univ., SE-58183 Linkoeping, SWE)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
108
号:
1
ページ:
014508
発行年:
2010年07月01日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)