文献
J-GLOBAL ID:201002206983819796
整理番号:10A0686370
イオン注入とパルスレーザ融解によってカルコゲンを過飽和させたシリコンの作成とサブバンドギャップ光学特性
Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting
著者 (8件):
BOB Brion P.
(Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA)
,
KOHNO Atsushi
(Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA)
,
CHARNVANICHBORIKARN Supakit
(Res. School of Physics and Engineering, Australian National Univ., Canberra City ACT 2601, AUS)
,
WARRENDER Jeffrey M.
(Benet Laboratories, U.S. Army ARDEC, Watervliet, New York 12189, USA)
,
UMEZU Ikurou
(Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA)
,
TABBAL Malek
(Dep. of Physics, American Univ. of Beirut, Beirut 1107 2020, Lebanon)
,
WILLIAMS James S.
(Res. School of Physics and Engineering, Australian National Univ., Canberra City ACT 2601, AUS)
,
AZIZ Michael J.
(Harvard School of Engineering and Applied Sciences, Cambridge, Massachusetts 02138, USA)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
107
号:
12
ページ:
123506
発行年:
2010年06月15日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)