文献
J-GLOBAL ID:201002215219930517
整理番号:10A1542953
ポジ型レジストとネガ型レジストのパターン崩壊挙動の比較
Comparison of positive tone versus negative tone resist pattern collapse behavior
著者 (5件):
YEH Wei-ming
(School of Chemical and Biomolecular Engineering, Georgia Inst. of Technol., Atlanta, Georgia 30332-0100)
,
NOGA David E.
(School of Chemical and Biomolecular Engineering, Georgia Inst. of Technol., Atlanta, Georgia 30332-0100)
,
LAWSON Richard A.
(School of Chemical and Biomolecular Engineering, Georgia Inst. of Technol., Atlanta, Georgia 30332-0100)
,
TOLBERT Laren M.
(School of Chemistry and Biochemistry, Georgia Inst. of Technol., Atlanta, Georgia 30332)
,
HENDERSON Clifford L.
(School of Chemical and Biomolecular Engineering, Georgia Inst. of Technol., Atlanta, Georgia 30332-0100)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
28
号:
6
ページ:
C6S6
発行年:
2010年11月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)