文献
J-GLOBAL ID:201002226967513009
整理番号:10A0847851
原子的に鋭い高密度タングステンナノチップ配列の作製と電界放出の研究
Fabrication and field emission study of atomically sharp high-density tungsten nanotip arrays
著者 (8件):
SUN Ke
(Dep. of Materials Sci. and Engineering, Univ. of California-Los Angeles, Los Angeles, California 90095, USA)
,
LEE Jae Young
(Dep. of Materials Sci. and Engineering, Univ. of California-Los Angeles, Los Angeles, California 90095, USA)
,
LI Biyun
(Dep. of Materials Sci. and Engineering, Univ. of California-Los Angeles, Los Angeles, California 90095, USA)
,
LIU Wei
(Dep. of Materials Sci. and Engineering, Univ. of California-Los Angeles, Los Angeles, California 90095, USA)
,
MIAO Congqin
(Dep. of Materials Sci. and Engineering, Univ. of California-Los Angeles, Los Angeles, California 90095, USA)
,
XIE Ya-hong
(Dep. of Materials Sci. and Engineering, Univ. of California-Los Angeles, Los Angeles, California 90095, USA)
,
WEI Xinyu
(Dep. of Polymer Sci. and Engineering, Univ. of Massachusetts-Amherst, Amherst, Massachusetts 01003, USA)
,
RUSSELL Thomas P.
(Dep. of Polymer Sci. and Engineering, Univ. of Massachusetts-Amherst, Amherst, Massachusetts 01003, USA)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
108
号:
3
ページ:
036102
発行年:
2010年08月01日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)