文献
J-GLOBAL ID:201002242857341887
整理番号:10A0083978
底部接触ペンタセン薄膜トランジスタ用の導電性ポリ3,4-エチレンジオキシチオフェンソース/ドレイン電極のアミノシラン単分子層支援パターン化
Aminosilane monolayer-assisted patterning of conductive poly(3,4-ethylenedioxythiophene) source/drain electrodes for bottom contact pentacene thin film transistors
著者 (8件):
PANG Ilsun
(Center for Materials and Processes of Self-Assembly, School of Advanced Materials Engineering, Kookmin Univ., Seoul ...)
,
KIM Hyunho
(Center for Materials and Processes of Self-Assembly, School of Advanced Materials Engineering, Kookmin Univ., Seoul ...)
,
KIM Sungsoo
(Dep. of Nanopolymer Materials Engineering, Pai Chai Univ., Daejeon 302-735, KOR)
,
JEONG Kyunghoon
(Center for Materials and Processes of Self-Assembly, School of Advanced Materials Engineering, Kookmin Univ., Seoul ...)
,
JUNG Hyun Suk
(Center for Materials and Processes of Self-Assembly, School of Advanced Materials Engineering, Kookmin Univ., Seoul ...)
,
YU Chung-jong
(Pohang Accelerator Lab., Pohang Univ. of Sci. and Technol., Pohang 790-784, KOR)
,
SOH Hoesup
(Center for Materials and Processes of Self-Assembly, School of Advanced Materials Engineering, Kookmin Univ., Seoul ...)
,
LEE Jaegab
(Center for Materials and Processes of Self-Assembly, School of Advanced Materials Engineering, Kookmin Univ., Seoul ...)
資料名:
Organic Electronics
(Organic Electronics)
巻:
11
号:
2
ページ:
338-343
発行年:
2010年02月
JST資料番号:
W1352A
ISSN:
1566-1199
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)