文献
J-GLOBAL ID:201002244397719854
整理番号:10A0467464
シリコンと直接接触の高k誘電体に関するケイ酸ランタンの界面および電気的性質
Interface and electrical properties of La-silicate for direct contact of high-k with silicon
著者 (12件):
KAKUSHIMA K.
(Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku ...)
,
TACHI K.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
ADACHI M.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
OKAMOTO K.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
SATO S.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
SONG J.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
KAWANAGO T.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
AHMET P.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
TSUTSUI K.
(Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku ...)
,
SUGII N.
(Interdisciplinary Graduate School of Sci. and Engineering, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku ...)
,
HATTORI T.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
,
IWAI H.
(Frontier Res. Center, Tokyo Inst. of Technol., 4259, Nagatsuta, Midori-ku, Yokohama 226-8502, JPN)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
54
号:
7
ページ:
715-719
発行年:
2010年07月
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)