文献
J-GLOBAL ID:201002250005598132
整理番号:10A0823367
三次元回折プロファイル分析を用いて決定したエピタキシャルSrTiO3/Si(001)の形態
Morphology of epitaxial SrTiO3/Si (001) determined using three-dimensional diffraction profile analysis
著者 (5件):
SEGAL Y.
(Dep. of Applied Physics and Center for Interface Structure and Phenomena, Yale Univ., New Haven Connecticut 06520-8284)
,
REINER J. W.
(Dep. of Applied Physics and Center for Interface Structure and Phenomena, Yale Univ., New Haven Connecticut 06520-8284)
,
ZHANG Z.
(Advanced Photon Source, Argonne National Lab., 9700 South Cass Avenue, Argonne, Illinois 60439)
,
AHN C. H.
(Dep. of Applied Physics and Center for Interface Structure and Phenomena, Yale Univ., New Haven Connecticut ...)
,
WALKER F. J.
(Dep. of Applied Physics and Center for Interface Structure and Phenomena, Yale Univ., New Haven Connecticut 06520-8284)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
28
号:
4
ページ:
C5B1
発行年:
2010年07月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)