文献
J-GLOBAL ID:201002260246048775
整理番号:10A1165719
HfInZnO非晶質酸化物薄膜トランジスタにおける光学的及び電気的バイアスの同時ストレスによるゲート電極からの電荷注入
Charge injection from gate electrode by simultaneous stress of optical and electrical biases in HfInZnO amorphous oxide thin film transistor
著者 (12件):
KWON Dae Woong
(Interuniversity Semiconductor Res. Center (ISRC) and Graduate School of Convergence Sci. and Technol., Seoul ...)
,
KIM Jang Hyun
(Interuniversity Semiconductor Res. Center (ISRC) and Graduate School of Convergence Sci. and Technol., Seoul ...)
,
CHANG Ji Soo
(Interuniversity Semiconductor Res. Center (ISRC) and Graduate School of Convergence Sci. and Technol., Seoul ...)
,
KIM Sang Wan
(Interuniversity Semiconductor Res. Center (ISRC) and Graduate School of Convergence Sci. and Technol., Seoul ...)
,
SUN Min-chul
(Interuniversity Semiconductor Res. Center (ISRC) and Graduate School of Convergence Sci. and Technol., Seoul ...)
,
KIM Garam
(Interuniversity Semiconductor Res. Center (ISRC) and Graduate School of Convergence Sci. and Technol., Seoul ...)
,
KIM Hyun Woo
(Interuniversity Semiconductor Res. Center (ISRC) and Graduate School of Convergence Sci. and Technol., Seoul ...)
,
PARK Jae Chul
(Semiconductor Lab., Samsung Advanced Inst. of Technol., Yongin, Gyeonggi-Do 446-712, KOR)
,
SONG Ihun
(Semiconductor Lab., Samsung Advanced Inst. of Technol., Yongin, Gyeonggi-Do 446-712, KOR)
,
KIM Chang Jung
(Semiconductor Lab., Samsung Advanced Inst. of Technol., Yongin, Gyeonggi-Do 446-712, KOR)
,
JUNG U In
(Semiconductor Lab., Samsung Advanced Inst. of Technol., Yongin, Gyeonggi-Do 446-712, KOR)
,
PARK Byung-gook
(Interuniversity Semiconductor Res. Center (ISRC) and Graduate School of Convergence Sci. and Technol., Seoul ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
97
号:
19
ページ:
193504
発行年:
2010年11月08日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)