文献
J-GLOBAL ID:201002268423528821
整理番号:10A0580432
有機金属気相エピタクシーによってGaAs基板上に成長させたInGaAsPにおける相分離とCuPt秩序化の共存特性
Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy
著者 (5件):
KONAKA Yohei
(Div. of Materials and Manufacturing Sci., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...)
,
ONO Ken-ichi
(Div. of Materials and Manufacturing Sci., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...)
,
ONO Ken-ichi
(High Frequency & Optical Device Works, Mitsubishi Electric Corp., Itami, Hyogo 664-8641, JPN)
,
TERAI Yoshikazu
(Div. of Materials and Manufacturing Sci., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...)
,
FUJIWARA Yasufumi
(Div. of Materials and Manufacturing Sci., Graduate School of Engineering, Osaka Univ., 2-1 Yamadaoka, Suita, Osaka ...)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
312
号:
14
ページ:
2056-2059
発行年:
2010年07月01日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)