文献
J-GLOBAL ID:201002276239017256
整理番号:10A0134471
シリコン貫通電極技術を用いた8Gb 3-D DDR3 DRAM
8 Gb 3-D DDR3 DRAM Using Through-Silicon-Via Technology
著者 (21件):
KANG Uksong
(Samsung Electronics, Gyeonggi-Do, KOR)
,
CHUNG Hoe-Ju
(Samsung Electronics, Gyeonggi-Do, KOR)
,
HEO Seongmoo
(Samsung Electronics, Gyeonggi-Do, KOR)
,
PARK Duk-Ha
(Samsung Electronics, Gyeonggi-Do, KOR)
,
LEE Hoon
(Samsung Electronics, Gyeonggi-Do, KOR)
,
KIM Jin Ho
(Samsung Electronics, Gyeonggi-Do, KOR)
,
AHN Soon-Hong
(Samsung Electronics, Gyeonggi-Do, KOR)
,
CHA Soo-Ho
(Samsung Electronics, Gyeonggi-Do, KOR)
,
AHN Jaesung
(Samsung Electronics, Gyeonggi-Do, KOR)
,
KWON DukMin
(Samsung Electronics, Gyeonggi-Do, KOR)
,
LEE Jae-Wook
(Samsung Electronics, Gyeonggi-Do, KOR)
,
JOO Han-Sung
(Samsung Electronics, Gyeonggi-Do, KOR)
,
KIM Woo-Seop
(Samsung Electronics, Gyeonggi-Do, KOR)
,
JANG Dong Hyeon
(Samsung Electronics, Gyeonggi-Do, KOR)
,
KIM Nam Seog
(Samsung Electronics, Gyeonggi-Do, KOR)
,
CHOI Jung-Hwan
(Samsung Electronics, Gyeonggi-Do, KOR)
,
CHUNG Tae-Gyeong
(Samsung Electronics, Gyeonggi-Do, KOR)
,
YOO Jei-Hwan
(Samsung Electronics, Gyeonggi-Do, KOR)
,
CHOI Joo Sun
(Samsung Electronics, Gyeonggi-Do, KOR)
,
KIM Changhyun
(Samsung Electronics, Gyeonggi-Do, KOR)
,
JUN Young-Hyun
(Samsung Electronics, Gyeonggi-Do, KOR)
資料名:
IEEE Journal of Solid-State Circuits
(IEEE Journal of Solid-State Circuits)
巻:
45
号:
1
ページ:
111-119
発行年:
2010年01月
JST資料番号:
B0761A
ISSN:
0018-9200
CODEN:
IJSCBC
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)