文献
J-GLOBAL ID:201002284930578526
整理番号:10A0047569
AlN薄膜中の高密度転位を用いた電気伝導性ナノワイヤの製作
Fabrication of electrically conductive nanowires using high-density dislocations in AlN thin films
著者 (7件):
TOKUMOTO Yuki
(Dep. of Advanced Materials Sci., Graduate School of Frontier Sci., The Univ. of Tokyo, 5-1-5 Kashiwanoha, Kashiwa ...)
,
AMMA Shin-ichi
(Inst. of Engineering Innovation, School of Engineering, The Univ. of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, JPN)
,
SHIBATA Naoya
(Inst. of Engineering Innovation, School of Engineering, The Univ. of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, JPN)
,
MIZOGUCHI Teruyasu
(Inst. of Engineering Innovation, School of Engineering, The Univ. of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, JPN)
,
EDAGAWA Keiichi
(Inst. of Industrial Sci., The Univ. of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505, JPN)
,
YAMAMOTO Takahisa
(Dep. of Advanced Materials Sci., Graduate School of Frontier Sci., The Univ. of Tokyo, 5-1-5 Kashiwanoha, Kashiwa ...)
,
IKUHARA Yuichi
(Inst. of Engineering Innovation, School of Engineering, The Univ. of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, JPN)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
106
号:
12
ページ:
124307
発行年:
2009年12月15日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)