文献
J-GLOBAL ID:201002288796096760
整理番号:10A0201711
SiCの基板上にエピタキシャル成長させたグラフェン上のHfO2誘電体の形成に関する光電子分光法によるその場観測
In situ photoemission spectroscopy study on formation of HfO2 dielectrics on epitaxial graphene on SiC substrate
著者 (9件):
CHEN Q.
(Dep. of Physics, National Univ. of Singapore, 2 Sci. Drive 3, Singapore 117542)
,
HUANG H.
(Dep. of Physics, National Univ. of Singapore, 2 Sci. Drive 3, Singapore 117542)
,
CHEN W.
(Dep. of Physics, National Univ. of Singapore, 2 Sci. Drive 3, Singapore 117542)
,
WEE A. T. S.
(Dep. of Physics, National Univ. of Singapore, 2 Sci. Drive 3, Singapore 117542)
,
FENG Y. P.
(Dep. of Physics, National Univ. of Singapore, 2 Sci. Drive 3, Singapore 117542)
,
CHAI J. W.
(Inst. of Materials Res. and Engineering, A*STAR (Agency for Sci., Technol., and Research), 3 Res. Link, Singapore 117602)
,
ZHANG Z.
(Inst. of Materials Res. and Engineering, A*STAR (Agency for Sci., Technol., and Research), 3 Res. Link, Singapore 117602)
,
PAN J. S.
(Inst. of Materials Res. and Engineering, A*STAR (Agency for Sci., Technol., and Research), 3 Res. Link, Singapore 117602)
,
WANG S. J.
(Inst. of Materials Res. and Engineering, A*STAR (Agency for Sci., Technol., and Research), 3 Res. Link, Singapore 117602)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
96
号:
7
ページ:
072111
発行年:
2010年02月15日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)