文献
J-GLOBAL ID:201002290133016695
整理番号:10A0213061
極端に短いp-チャネルトランジスタにおけるドレイン側からソース側へと到達するハロー注入とその逆のハロー注入の観察
Observation of halo implant from the drain side reaching the source side and vice versa in extremely short p-channel transistors
著者 (8件):
LAU W.s.
(Nanyang Technological Univ., School of Electrical and Electronic Engineering, Div. of Microelectronics, Block S2.1 ...)
,
YANG Peizhen
(Nanyang Technological Univ., School of Electrical and Electronic Engineering, Div. of Microelectronics, Block S2.1 ...)
,
LIM Eng Hua
(Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D St. 2, Singapore 738406, SGP)
,
TANG Yee Ling
(Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D St. 2, Singapore 738406, SGP)
,
LAI Seow Wei
(Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D St. 2, Singapore 738406, SGP)
,
LO V.l.
(Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D St. 2, Singapore 738406, SGP)
,
SIAH S.y.
(Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D St. 2, Singapore 738406, SGP)
,
CHAN L.
(Chartered Semiconductor Manufacturing Ltd., 60 Woodlands Industrial Park D St. 2, Singapore 738406, SGP)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
50
号:
3
ページ:
346-350
発行年:
2010年03月
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)